IRF6608TR1 Datasheet, PDF (1/9 Pages) International Rectifier – Application Specific MOSFETs

l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
l Low Switching Losses
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Compatible with existing Surface Mount Techniques
PD - 94727B
IRF6608
V_DSS
30V
HEXFET^® Power MOSFET
R_DS(on) max Qg
9.0mΩ@V_GS = 10V 16nC
11mΩ@V_GS = 4.5V
ST
DirectFET™ ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7, 8 for details)
SQ
SX
ST
MQ
MX
MT
Description
The IRF6608 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TM packaging to
achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and
processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous
best thermal resistance by 80%.
The IRF6608 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest
generation of processors operating at higher frequencies. The IRF6608 has been optimized for parameters that are critical in
synchronous buck converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6608 has been
optimized for parameters that are critical in synchronous buck converters including Rds(on) and gate charge to minimize losses in
the control FET socket.
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
I_D @ T_C = 25°C
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
P_D @T_C = 25°C
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current c
Power Dissipation g
Power Dissipation g
Power Dissipation
Linear Derating Factor
T_J
T_STG
Operating Junction and
Storage Temperature Range
Thermal Resistance
Max.
30
±12
55
13
10
100
2.1
1.4
42
0.017
-40 to + 150
Units
V
A
W
W/°C
°C
R_θJA
R_θJA
R_θJA
R_θJC
R_θJ-PCB
Parameter
Junction-to-Ambient fj
Junction-to-Ambient gj
Junction-to-Ambient hj
Junction-to-Case ij
Junction-to-PCB Mounted
Typ.
–––
12.5
20
–––
1.0
Max.
58
–––
–––
3.0
–––
Units
°C/W
Notes  through ˆ are on page 2
www.irf.com
1
3/31/04