IRF6607 Datasheet, PDF (1/11 Pages) International Rectifier – Power MOSFET

PD - 94574B
IRF6607
HEXFET^® Power MOSFET
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
l High Cdv/dt Immunity
V_DSS
30V
R_DS(on) max Qg(typ.)
3.3mΩ@V_GS = 10V
50nC
4.4mΩ@V_GS = 4.5V
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Compatible with existing Surface
Mount Techniques
MT
Applicable DirectFET Outline and Substrate Outline (see p.9,10 for details)
DirectFET™ ISOMETRIC
SQ
SX
ST
MQ
MX
MT
Description
The IRF6607 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TM packaging
to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and
vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the
manufacturing methods and process. The DirectFET package allows dual sided cooling to maximize thermal transfer in
power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6607 balances both low resistance and low charge along with ultra low package inductance to reduce both conduc-
tion and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power
the latest generation of processors operating at higher frequencies. The IRF6607 has been optimized for parameters that
are critical in synchronous buck converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The
IRF6607 offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter
Max.
Units
V_DS
V_GS
I_D @ T_C = 25°C
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
P_D @T_C = 25°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
c ^{Continuous Drain Current, VGS @ 10V}
Pulsed Drain Current
g Power Dissipation
g Power Dissipation
Power Dissipation
Linear Derating Factor
30
±12
94
27
22
220
3.6
2.3
42
0.029
V
A
W
W/°C
T_J
T_STG
Operating Junction and
Storage Temperature Range
-40 to + 150
°C
Thermal Resistance
Parameter
R_θJA
R_θJA
R_θJA
R_θJC
fj Junction-to-Ambient
gj Junction-to-Ambient
hj Junction-to-Ambient
ij Junction-to-Case
R_θJ-PCB
Junction-to-PCB Mounted
Notes  through ˆ are on page 11
www.irf.com
Typ.
–––
12.5
20
–––
–––
Max.
35
–––
–––
3.0
1.0
Units
°C/W
1
4/8/04