IRF6604TR1 Datasheet, PDF (1/13 Pages) International Rectifier – Application Specific MOSFETs

l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
l Low Switching Losses
V_DSS
30V
PD - 94365E
IRF6604
HEXFET^® Power MOSFET
R_DS(on) max
Qg
11.5mΩ@V_GS = 7.0V 17nC
13mΩ@V_GS = 4.5V
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Compatible with existing Surface Mount
Techniques
MQ
DirectFET™ ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.9,10 for details)
SQ
SX
ST
MQ
MX
MT
Description
The IRF6604 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TM packaging
to achieve the lowest on-state resistance charge product in a package that has the footprint of an SO-8 and only 0.7 mm
profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly
equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed
regarding the manufacturing methods and process. The DirectFET package allows dual sided cooling to maximize
thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6604 balances both low resistance and low charge along with ultra low package inductance to reduce both conduc-
tion and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power
the latest generation of processors operating at higher frequencies. The IRF6604 has been optimized for parameters that
are critical in synchronous buck converters including Rds(on) and gate charge to minimize losses in the control FET socket.
Absolute Maximum Ratings
Parameter
Max.
Units
V_DS
Drain-to-Source Voltage
30
V
V_GS
I_D @ T_C = 25°C
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
P_D @T_C = 25°C
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 7.0V
Continuous Drain Current, V_GS @ 7.0V
c ^{Continuous Drain Current, VGS @ 7.0V}
Pulsed Drain Current
g Power Dissipation
g Power Dissipation
Power Dissipation
Linear Derating Factor
±12
49
12
9.2
92
2.3
1.5
42
0.018
A
W
W/°C
T_J
Operating Junction and
T_STG
Storage Temperature Range
Thermal Resistance
-40 to + 150
°C
Parameter
R_θJA
R_θJA
R_θJA
R_θJC
fj Junction-to-Ambient
gj Junction-to-Ambient
hj Junction-to-Ambient
ij Junction-to-Case
Typ.
–––
12.5
20
–––
Max.
55
–––
–––
3.0
Units
°C/W
R_θJ-PCB
Junction-to-PCB Mounted
1.0
–––
Notes  through ˆ are on page 11
www.irf.com
1
11/16/05