IRF6604 Datasheet, PDF (1/11 Pages) International Rectifier – Power MOSFET

l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
l Low Switching Losses
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Compatible with existing Surface Mount
Techniques
V_DSS
30V
PD - 94365B
IRF6604
HEXFET^® Power MOSFET
R_DS(on) max Qg
11.5mΩ@V_GS = 7.0V 17nC
13mΩ@V_GS = 4.5V
Description
DirectFET™ ISOMETRIC
The IRF6604 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TM packaging
to achieve the lowest on-state resistance charge product in a package that has the footprint of an SO-8 and only 0.7 mm
profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly
equipment and vapor phase, infra-red or convection soldering techniques. The DirectFET package allows dual sided cooling
to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6604 balances both low resistance and low charge along with ultra low package inductance to reduce both conduc-
tion and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power
the latest generation of processors operating at higher frequencies. The IRF6604 has been optimized for parameters that
are critical in synchronous buck converters including Rds(on) and gate charge to minimize losses in the control FET socket.
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
Max.
30
Units
V
V_GS
I_D @ T_C = 25°C
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
P_D @T_C = 25°C
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 7.0V
Continuous Drain Current, V_GS @ 7.0V
c ^{Continuous Drain Current, VGS @ 7.0V}
Pulsed Drain Current
g Power Dissipation
g Power Dissipation
Power Dissipation
±12
49
12
A
9.2
92
2.3
1.5
W
42
Linear Derating Factor
T_J
Operating Junction and
T_STG
Storage Temperature Range
Thermal Resistance
0.018
-40 to + 150
W/°C
°C
R_θJA
R_θJA
R_θJA
R_θJC
R_θJ-PCB
f ^Parameter
Junction-to-Ambient
g Junction-to-Ambient
h Junction-to-Ambient
i Junction-to-Case
Junction-to-PCB Mounted
Typ.
–––
12.5
20
–––
1.0
Max.
55
–––
–––
3.0
–––
Units
°C/W
Notes  through ‡ are on page 11
www.irf.com
1
6/11/03