IRF6603 Datasheet, PDF (1/11 Pages) International Rectifier – HEXFETPower MOSFET

PD - 94364E
IRF6603
HEXFET^® Power MOSFET
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
V_DSS
30V
R_DS(on) max Qg(typ.)
3.4mΩ@V_GS = 10V
48nC
5.5mΩ@V_GS = 4.5V
l High Cdv/dt Immunity
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Compatible with existing Surface Mount
Techniques
MT
DirectFET™ ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.9,10 for details)
SQ
SX
ST
MQ
MX
MT
Description
The IRF6603 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TM packaging to achieve the
lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and process. The DirectFET package
allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6603 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation
of processors operating at higher frequencies. The IRF6603 has been optimized for parameters that are critical in synchronous buck
converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6603 offers particularly low Rds(on) and high Cdv/
dt immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
Max.
30
Units
V
V_GS
I_D @ T_C = 25°C
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
P_D @T_C = 25°C
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
c ^{Continuous Drain Current, VGS @ 10V}
Pulsed Drain Current
g Power Dissipation
g Power Dissipation
Power Dissipation
+20/-12
92
27
A
22
200
3.6
2.3
W
42
Linear Derating Factor
T_J
Operating Junction and
T_STG
Storage Temperature Range
Thermal Resistance
0.029
-40 to + 150
W/°C
°C
R_θJA
R_θJA
R_θJA
R_θJC
R_θJ-PCB
Notes 
fj ^Parameter
Junction-to-Ambient
gj Junction-to-Ambient
hj Junction-to-Ambient
ij Junction-to-Case
Junction-to-PCB Mounted
through ˆ are on page 11
Typ.
–––
12.5
20
–––
1.0
Max.
35
–––
–––
3.0
–––
Units
°C/W
www.irf.com
1
4/8/04