IRF6602 Datasheet, PDF (1/11 Pages) International Rectifier – HEXFET Power MOSFET

PD-94363C
IRF6602/IRF6602TR1
HEXFET^® Power MOSFET
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
l Low Switching Losses
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Compatible with existing Surface Mount Techniques
V_DSS
20V
R_DS(on) max
13mΩ@V_GS = 10V
19mΩ@V_GS = 4.5V
Qg
12nC
MQ
DirectFET™ ISOMETRIC
Applicable DirectFET Package/Layout Pad (see p.9, 10 for details)
SQ
SX
ST
MQ
MX
MT
Description
The IRF6602 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TM packaging to
achieve the lowest on-state resistance charge product in a package that has the footprint of an SO-8 and only 0.7 mm profile.
The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment
and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the
manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in
power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6602 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the
latest generation of processors operating at higher frequencies. The IRF6602 has been optimized for parameters that are
critical in synchronous buck converters including Rds(on) and gate charge to minimize losses in the control FET socket.
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
Max.
20
Units
V
V_GS
I_D @ T_C = 25°C
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
P_D @T_C = 25°C
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
c ^{Continuous Drain Current, VGS @ 10V}
Pulsed Drain Current
g Power Dissipation
g Power Dissipation
Power Dissipation
±20
48
11
8.9
A
89
2.3
W
1.5
42
Linear Derating Factor
T_J
Operating Junction and
T_STG
Storage Temperature Range
Thermal Resistance
0.018
-40 to + 150
W/°C
°C
R_θJA
R_θJA
R_θJA
R_θJC
R_θJ-PCB
Notes 
f ^Parameter
Junction-to-Ambient
g Junction-to-Ambient
h Junction-to-Ambient
i Junction-to-Case
Junction-to-PCB Mounted
through ‡ are on page 11
Typ.
–––
12.5
20
–––
1.0
Max.
55
–––
–––
3.0
–––
Units
°C/W
www.irf.com
1
3/1/04