IRF6601 Datasheet, PDF (1/8 Pages) International Rectifier – DirectFET™ Power MOSFET(Vdss=20V)

l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
l Low Switching Losses
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Compatible with exisiting Surface Mount
Techniques
PD - 94366C
IRF6601
DirectFET^TM Power MOSFET
V_DSS
20V
R_DS(on) max
I_D
3.8mΩ@V_GS = 10V 26A
5.0mΩ@V_GS = 4.5V 21A
DirectFET™ ISOMETRIC
Description
The IRF6601 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TM packaging
to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques. The DirectFET package allows dual sided cooling to maximize thermal transfer
in power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6601 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the
latest generation of processors operating at higher frequencies. The IRF6601 has been optimized for parameters that are
critical in synchronous buck converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6601
offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter
V_DS
I_D @ T_C = 25°C
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
P_D @T_C = 25°C
Drain- Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Power Dissipation
Linear Derating Factor
V_GS
T_J, T_STG
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
Max.
20
85
26
20
200
3.6
2.3
42
28
±20
-55 to + 150
Units
V
A
W
mW/°C
V
°C
Symbol
R_θJA
R_θJA
R_θJA
R_θJC
R_θJ-PCB
www.irf.com
Parameter
Junction-to-Ambientƒ
Junction-to-Ambient„
Junction-to-Ambient…
Junction-to-Case†
Junction-to-PCB mounted
Typ.
–––
–––
–––
–––
–––
Max.
35
12.5
20
3.0
1.0
Units
°C/W
1
3/25/02