 English |
|
|
|
|
|
|
|
| IRF640S Datasheet, PDF (1/10 Pages) STMicroelectronics – N - CHANNEL 200V - 0.150ohm - 18A TO-263 MESH OVERLAY] MOSFET | |||
| |||
|
l Surface Mount (IRF640S)
l Low-profile through-hole (IRF640L)
l Available in Tape & Reel (IRF640S)
l Dynamic dv/dt Rating
l 150°C Operating Temperature
l Fast Switching
G
l Fully Avalanche Rated
Description
Third Generation HEXFETs from International Rectifier provide
the designer with the best combinations of fast switching ,
ruggedized device design, low on-resistance and cost-
effectiveness.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in any
existing surface mount package. The D2Pak is suitable for high
current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface
mount application.The through-hole version (IRF640L) is
available for low-profile applications.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10VÂ
Continuous Drain Current, VGS @ 10VÂ
Pulsed Drain Current ÂÂ
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche EnergyÂÂ
Avalanche CurrentÂ
Repetitive Avalanche EnergyÂ
Peak Diode Recovery dv/dt ÂÂ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
www.irf.com
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
PD -90902B
IRF640S/L
HEXFET® Power MOSFET
D
VDSS = 200V
RDS(on) = 0.18â¦
ID = 18A
S
D 2 Pak
T O -26 2
Max.
18
11
72
3.1
130
1.0
± 20
580
18
13
5.0
-55 to + 175
300 (1.6mm from case )
Typ.
âââ
âââ
Max.
1.0
40
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
7/20/99
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese