IRF6156 Datasheet, PDF (1/13 Pages) International Rectifier – FlipFET Power MOSFET

l Ultra Low R_SS(on) per Footprint Area
l Low Thermal Resistance
l Bi-Directional N-Channel Switch
l Super Low Profile (<.8mm)
l Available Tested on Tape & Reel
l ESD Protection Diode ^†
V_SS
20V
Description
True chip-scale packaging is available from International Recti-
fier. Through the use of advanced processing techniques and a
unique packaging concept, extremely low on-resistance and the
highest power densities in the industry have been made available
for battery and load management applications. These benefits,
combined with the ruggedized device design that International
Rectifier is well known for, provide the designer with an
extremely efficient and reliable device.
The FlipFET™ package, is one-fifth the footprint of a comparable
TSSOP-8 package and has a profile of less than .8mm. Com-
bined with the low thermal resistance of the die level device, this
makes the FlipFET™ the best device for applications where
printed circuit board space is at a premium and in extremely thin
application environments such as battery packs, mobile phones
and PCMCIA cards.
PD - 94592A
IRF6156
FlipFET Power MOSFET
R_SS(on) max
: 40m @V_GS1,2 = 4.5V
: 60m @V_GS1,2 = 2.5V
I_S
±6.5
±5.2
Absolute Maximum Ratings
Parameter
V_SS
I_S @ T_A = 25°C
I_S @ T_A = 70°C
I_SM
P_D @T_A = 25°C
P_D @T_A = 70°C
Source-to-Source Voltage
e Continuous Current, V_GS1 = V_GS2 = 4.5V
e Continuous Current, V_GS1 = V_GS2 = 4.5V
c Pulsed Current
e Power Dissipation
e Power Dissipation
V_GS
T_J
T_STG
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
R_θJA
e Junction-to-Ambient
R_θJ-PCB
Junction-to-PCB
Max.
20
±6.5
±5.2
33
2.5
1.6
20
±12
-55 to + 150
Units
V
A
W
mW/°C
V
°C
Typ.
–––
35
Max.
50
–––
Units
°C/W
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1
09/25/03