IRF6150 Datasheet, PDF (1/3 Pages) International Rectifier – HEXFET Power MOSFET

OBSOLETE
l Ultra Low R_SS(on) per Footprint Area
V_SS
l Low Thermal Resistance
-20V
l Bi-Directional P-Channel Switch
l Super Low Profile (<.8mm)
l Available Tested on Tape & Reel
PD - 93943
IRF6150
HEXFET^® Power MOSFET
R_SS(on) max
0.036Ω@V_GS1,2 = -4.5V
0.052Ω@V_GS1,2 = -2.5V
I_S
-7.9A
-6.3A
Description
True chip-scale packaging is available from International
Rectifier. Through the use of advanced processing tech-
niques and a unique packaging concept, extremely low
on-resistance and the highest power densities in the
industry have been made available for battery and load
management applications. These benefits, combined with
the ruggedized device design that International Rectifier
is well known for, provides the designer with an ex-
tremely efficient and reliable device.
6
*
The FlipFET™ package, is one-third the footprint of a
comparable SO-8 package and has a profile of less than
.8mm. Combined with the low thermal resistance of the
die level device, this makes the FlipFET™ the best device
for applications where printed circuit board space is at a
premium and in extremely thin application environments
such as battery packs, cell phones and PCMCIA cards.
Absolute Maximum Ratings
V_SS
I_S @ T_C = 25°C
I_S @ T_C = 70°C
I_SM
P_D @T_C = 25°C
P_D @T_C = 70°C
V_GS
T_J, T_STG
Parameter
Source- Source Voltage
Continuous Current, V_GS1 = V_GS2 = -4.5V
Continuous Current, V_GS1 = V_GS2 = -4.5V
Pulsed Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
Symbol
R_θJA
R_θJ-PCB
Parameter
Junction-to-Ambientƒ
Junction-to-PCB mounted
www.irf.com
6
*
Max.
-20
±7.9
±6.3
±40
3.0
1.9
24
± 12
-55 to + 150
Typ.
17
Max.
42
–––
Units
V
A
W
mW/°C
V
°C
Units
°C/W
1
07/26/04