IRF6100PBF Datasheet, PDF (1/8 Pages) International Rectifier – HEXFET Power MOSFET

PD - 96012B
l Ultra Low R_DS(on) per Footprint Area
l Low Thermal Resistance
l P-Channel MOSFET
l One-third Footprint of SOT-23
l Super Low Profile (<.8mm)
l Available Tested on Tape & Reel
l Lead-Free
Description
True chip-scale packaging is available from International
Rectifier. Through the use of advanced processing tech-
niques, and a unique packaging concept, extremely low
on-resistance and the highest power densities in the
industry have been made available for battery and load
management applications. These benefits, combined with
the ruggedized device design , that International Rectifier
is well known for, provides the designer with an ex-
tremely efficient and reliable device.
V_DSS
-20V
G
The FlipFET™ package, is one-third the footprint of a
comparable SOT-23 package and has a profile of less
than .8mm. Combined with the low thermal resistance of
the die level device, this makes the FlipFET™ the best
device for application where printed circuit board space is
at a premium and in extremely thin application environ-
ments such as battery packs, cell phones and PCMCIA
cards.
Absolute Maximum Ratings
V_DS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
V_GS
T_J, T_STG
Parameter
Drain- Source Voltage
Continuous Drain Current, V_GS @ 4.5V
Continuous Drain Current, V_GS @ 4.5V
Pulsed Drain Current 
Power Dissipationƒ
Power Dissipationƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
IRF6100PbF
HEXFET^® Power MOSFET
R_DS(on) max
0.065Ω@V_GS = -4.5V
0.095Ω@V_GS = -2.5V
I_D
-5.1A
-4.1A
D
S
FlipFET™ ISOMETRIC
Max.
-20
±5.1
±3.5
±35
2.2
1.4
17
± 12
-55 to + 150
Units
V
A
W
mW/°C
V
°C
Thermal Resistance
Symbol
R_θJA
R_θJ-PCB
www.irf.com
Parameter
Junction-to-Ambientƒ
Junction-to-PCB mounted
Typ.
35
Max.
56.5
–––
Units
°C/W
1
05/17/06