IRF5M3710 Datasheet, PDF (1/7 Pages) International Rectifier – POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.03ohm, Id=35A)

PD - 94234
HEXFET^® POWER MOSFET
THRU-HOLE (TO-254AA)
IRF5M3710
100V, N-CHANNEL
Product Summary
Part Number
IRF5M3710
BVDSS
100V
RDS(on) ID
0.03Ω 35A*
Fifth Generation HEXFET^® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device
for use in a wide variety of applications.
These devices are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits.
TO-254AA
Features:
n Low RDS(on)
n Avalanche Energy Ratings
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Light Weight
Absolute Maximum Ratings
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
* Current is limited by package
For footnotes refer to the last page
www.irf.com
Units
35*
29
A
140
125
W
1.0
W/°C
±20
V
350
mJ
28
A
12.5
mJ
4.0
-55 to 150
V/ns
o_C
300 (0.063in./1.6mm from case for 10s)
9.3 (Typical)
g
1
06/08/01