IRF5851TRPBF Datasheet, PDF (1/14 Pages) International Rectifier – Dual N and P Channel MOSFET

l Ultra Low On-Resistance
l Dual N and P Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Low Gate Charge
l Lead-Free
l Halogen-Free
PD-95341A
IRF5851PbF
HEXFET^® Power MOSFET
* _
6 
 ^'
N-Ch
 6 ^{VDSS 20V}
P-Ch
-20V
* 
 ' _{RDS(on) 0.090Ω 0.135Ω}
Description
These N and P channel MOSFETs from International Rectifier utilize advanced
processing techniques to achieve the extremely low on-resistance per silicon
area. This benefit provides the designer with an extremely efficient device for
use in battery and load management applications.
This Dual TSOP-6 package is ideal for applications where printed circuit
board space is at a premium and where maximum functionality is required.
With two die per package, the IRF5851 can provide the functionality of two
SOT-23 packages in a smaller footprint. Its unique thermal design and
R_DS(on) reduction enables an increase in current-handling capability.
TSOP-6
Absolute Maximum Ratings
Parameter
V_DS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
V_GS
T_J, T_STG
Drain-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Power Dissipation ƒ
Power Dissipation ƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
Parameter
R_θJA
Maximum Junction-to-Ambient ƒ
www.irf.com
Max.
N-Channel
P-Channel
20
-20
2.7
-2.2
2.2
-1.7
11
-9.0
0.96
0.62
7.7
± 12
-55 to + 150
Units
A
W
mW/°C
V
°C
Typ.
–––
Max.
130
Units
°C/W
1
04/20/10