IRF5851 Datasheet, PDF (1/14 Pages) International Rectifier – Power MOSFET(Vdss = +-20 V)

l Ultra Low On-Resistance
l Dual N and P Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Low Gate Charge
G1 ₁
S2 2
G2 3
Description
These N and P channel MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
the extremely low on-resistance per silicon area. This
benefit provides the designer with an extremely efficient
device for use in battery and load management
applications.
This Dual TSOP-6 package is ideal for applications
where printed circuit board space is at a premium and
where maximum functionality is required. With two die
per package, the IRF5851 can provide the functionality of
two SOT-23 packages in a smaller footprint. Its unique
thermal design and R_DS(on) reduction enables an
increase in current-handling capability.
PD-93998A
IRF5851
HEXFET^® Power MOSFET
6 ^D1
N-Ch
V_DSS 20V
5 S1
P-Ch
-20V
4 D2 _{RDS(on) 0.090Ω 0.135Ω}
TSOP-6
Absolute Maximum Ratings
Parameter
V_DS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
V_GS
T_J, T_STG
Drain-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Power Dissipation ƒ
Power Dissipation ƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
R_θJA
www.irf.com
Parameter
Maximum Junction-to-Ambient ƒ
Max.
N-Channel
P-Channel
20
-20
2.7
-2.2
2.2
-1.7
11
-9.0
0.96
0.62
7.7
± 12
-55 to + 150
Units
A
W
mW/°C
V
°C
Typ.
–––
Max.
130
Units
°C/W
1
2/26/02