IRF5850 Datasheet, PDF (1/9 Pages) International Rectifier – Power MOSFET(Vdss=-20V, Rds(on)=0.135ohm)

l Ultra Low On-Resistance
l Dual P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Low Gate Charge
PD - 93947
IRF5850
HEXFET^® Power MOSFET
V_DSS = -20V
Top View
R_DS(on) = 0.135Ω
Description
These P-channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
This Dual TSOP-6 package is ideal for applications where
printed circuit board space is at a premium and where
maximum functionality is required. With two die per
package, the IRF5850 can provide the functionality of two
SOT-23 packages in a smaller footprint. Its unique thermal
design and R_DS(on) reduction enables an increase in
current-handling capability.
Absolute Maximum Ratings
V_DS
I_D @ T_A = 25°C
I_D @ T_A= 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
V_GS
T_J, T_STG
Parameter
Drain- Source Voltage
Continuous Drain Current, V_GS @ -4.5V
Continuous Drain Current, V_GS @ -4.5V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
TSOP-6
Max.
-20
-2.2
-1.8
-9.0
0.96
0.62
7.7
± 12
-55 to + 150
Units
V
A
W
mW/°C
V
°C
Thermal Resistance
R_θJA
www.irf.com
Parameter
Maximum Junction-to-Ambientƒ
Max.
130
Units
°C/W
1
7/25/00