IRF5810TRPBF Datasheet, PDF (1/9 Pages) International Rectifier – Ultra Low On-Resistance

l Ultra Low On-Resistance
l Dual P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Low Gate Charge
l Lead-Free
l Halogen-Free
Description
These P-channel HEXFET^® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance
per silicon area. This benefit provides the designer
with an extremely efficient device for use in battery and
load management applications.
This Dual TSOP-6 package is ideal for applications
where printed circuit board space is at a premium and
where maximum functionality is required. With two
die per package, the IRF5810 can provide the
functionality of two SOT-23 packages in a smaller
footprint. Its unique thermal design and R_DS(on)
reduction enables an increase in current-handling
capability.
V_DSS
-20V
PD - 95469B
IRF5810PbF
HEXFET^® Power MOSFET
R_DS(on) max (mW)
90@V_GS = -4.5V
135@V_GS = -2.5V
I_D
-2.9A
-2.3A
TSOP-6
Absolute Maximum Ratings
V_DS
I_D @ T_A = 25°C
I_D @ T_A= 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
V_GS
T_J, T_STG
Parameter
Drain- Source Voltage
Continuous Drain Current, V_GS @ -4.5V
Continuous Drain Current, V_GS @ -4.5V
Pulsed Drain Current 
Power Dissipation ƒ
Power Dissipation ƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-20
-2.9
-2.3
-11
0.96
0.62
0.008
± 12
-55 to + 150
Units
V
A
W
mW/°C
V
°C
Thermal Resistance
Parameter
R_θJA
Maximum Junction-to-Ambientƒ
www.irf.com
Max.
130
Units
°C/W
1
04/20/10