IRF5806TRPBF Datasheet, PDF (1/9 Pages) International Rectifier – Ultra Low On-Resistance

l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Low Gate Charge
l Lead-Free
l Halogen-Free
Description
These P-channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This
benefit provides the designer with an extremely efficient
device for use in battery and load management
applications.
The TSOP-6 package with its customized leadframe
produces a HEXFET^® power MOSFET with R_DS(on)
60% less than a similar size SOT-23. This package is
ideal for applications where printed circuit board space
is at a premium. It's unique thermal design and R_DS(on)
reduction enables a current-handling increase of nearly
300% compared to the SOT-23.
V_DSS
-20V
PD - 95476B
IRF5806PbF
HEXFET^® Power MOSFET
R_DS(on) max
86mΩ@V_GS = -4.5V
147mΩ@V_GS = -2.5V
I_D
-4.0A
-3.0A
D
1
A
6
D
D
2
5
D
G
3
4
S
Top View
TSOP-6
Absolute Maximum Ratings
Parameter
V_DS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
Drain-Source Voltage
Continuous Drain Current, V_GS @ -4.5V
Continuous Drain Current, V_GS @ -4.5V
Pulsed Drain Current
Maximum Power Dissipationƒ
Maximum Power Dissipationƒ
Linear Derating Factor
V_GS
T_J , T_STG
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-20
-4.0
-3.3
-16.5
2.0
1.3
0.02
± 20
-55 to + 150
Units
V
A
W
W
W/°C
V
°C
Thermal Resistance
Parameter
R_θJA
Maximum Junction-to-Ambientƒ
www.irf.com
Max.
62.5
Units
°C/W
1
04/20/10