IRF5803D2PBF Datasheet, PDF (1/11 Pages) International Rectifier – FETKY ®MOSFET & Schottky Diode

PD- 95160A
l Co-packaged HEXFET® Power
MOSFET and Schottky Diode
l Ideal For Buck Regulator Applications
l P-Channel HEXFET®
l Low V_F Schottky Rectifier
l SO-8 Footprint
l Lead-Free
Description
The FETKY^TM family of Co-packaged HEXFETs and
Schottky diodes offer the designer an innovative board
space saving solution for switching regulator and
power management applications. HEXFETs utilize
advanced processing techniques to achieve extremely
low on-resistance per silicon area. Combining this
technology with International Rectifier's low forward
drop Schottky rectifiers results in an extremely efficient
device suitable for use in a wide variety of portable
electronics applications.
IRF5803D2PbF
FETKY ^TM MOSFET & Schottky Diode
A
1
A
2
8
K
7
K
V_DSS = -40V
S
3
6 _{D RDS(on) = 112mΩ}
G
4
5
D
Schottky Vf = 0.51V
Top View
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics. The
SO-8 package is designed for vapor phase, infrared or
wave soldering techniques.
Absolute Maximum Ratings (T_A = 25°C Unless Otherwise Noted)
Parameter
Maximum
I_D @ T_A = 25°C
Continuous Drain Current, V_GS @ -10V
-3.4
I_D @ T_A = 70°C
Continuous Drain Current, V_GS @ -10V
-2.7
I_DM
Pulsed Drain Current À
-27
P_D @T_A = 25°C
Power Dissipation
2.0
P_D @T_A = 70°C
Power Dissipation
1.3
Linear Derating Factor
16
V_GS
T_J, T_STG
Gate-to-Source Voltage
Junction and Storage Temperature Range
± 20
-55 to +150
SO-8
Units
A
W
mW/°C
V
°C
Thermal Resistance
Symbol
R_θJL
R_θJA
R_θJA
Parameter
Junction-to-Drain Lead, MOSFET
Junction-to-Ambient ƒ, MOSFET
Junction-to-Ambient ƒ, SCHOTTKY
Typ.
–––
–––
–––
Notes:
 Repetitive rating – pulse width limited by max. junction temperature (see fig. 11)
‚ Pulse width ≤ 400µs – duty cycle ≤ 2%
ƒ Surface mounted on 1 inch square copper board, t ≤ 10sec.
Max.
20
62.5
62.5
Units
°C/W
www.irf.com
1
10/7/04