IRF5803 Datasheet, PDF (1/9 Pages) International Rectifier – Power MOSFET(Vdss=-40V)

l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Low Gate Charge
V_DSS
-40V
PD-94015
IRF5803
HEXFET^® Power MOSFET
R_DS(on) max (mΩ)
112@V_GS = -10V
190@V_GS = -4.5V
I_D
-3.4A
-2.7A
Description
These P-channel HEXFET^® Power MOSFETs from
International Rectifier utilize advanced processing ^{D 1}
techniques to achieve the extremely low on-resistance
per silicon area. This benefit provides the designer D ²
with an extremely efficient device for use in battery and
load management applications.
G
3
A
6
D
5
D
4
S
The TSOP-6 package with its customized leadframe
produces a HEXFET^® power MOSFET with R_DS(on)
60% less than a similar size SOT-23. This package is
ideal for applications where printed circuit board space
is at a premium. It's unique thermal design and R_DS(on)
reduction enables a current-handling increase of nearly
300% compared to the SOT-23.
Top View
TSOP-6
Absolute Maximum Ratings
V_DS
I_D @ T_A = 25°C
I_D @ T_A= 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
V_GS
T_J, T_STG
Parameter
Drain- Source Voltage
Continuous Drain Current, V_GS @ -10V
Continuous Drain Current, V_GS @ -10V
Pulsed Drain Current 
Power Dissipation ƒ
Power Dissipation ƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
R_θJA
www.irf.com
Parameter
Maximum Junction-to-Ambientƒ
Max.
-40
-3.4
-2.7
-27
2.0
1.3
16
± 20
-55 to + 150
Units
V
A
W
mW/°C
V
°C
Max.
62.5
Units
°C/W
1
03/05/01