IRF5801 Datasheet, PDF (1/8 Pages) International Rectifier – Power MOSFET(Vdss=200V, Rds(on)max=2.2ohm, Id=0.6A)

PD-94044
SMPS MOSFET
IRF5801
HEXFET^® Power MOSFET
Applications
l High frequency DC-DC converters
V_DSS
200V
R_DS(on) max
I_D
2.2Ω
0.6A
Benefits
l Low Gate to Drain Charge to Reduce
Switching Losses
D
1
A
6
D
l Fully Characterized Capacitance Including _D 2
Effective C_OSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
G
3
5
D
4
S
and Current
Top View
TSOP-6
Absolute Maximum Ratings
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
V_GS
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt †
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
0.6
0.48
4.8
2.0
0.016
± 30
9.6
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance
Symbol
R_θJA
Parameter
Junction-to-Ambient „
Notes  through † are on page 8
www.irf.com
Typ.
–––
Max.
62.5
Units
°C/W
1
01/17/01