IRF540ZSTRLPBF Datasheet, PDF (1/12 Pages) International Rectifier – Advanced Process Technology

PD - 95531A
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
Description
This HEXFET^® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating.These features
combine to make this design an extremely efficient
and reliable device for use in a wide variety of
applications.
IRF540ZPbF
IRF540ZSPbF
IRF540ZLPbF
HEXFET^® Power MOSFET
D
V_DSS = 100V
R_DS(on) = 26.5mΩ
G
I_D = 36A
S
TO-220AB
IRF540ZPbF
D²Pak
TO-262
IRF540ZSPbF IRF540ZLPbF
Absolute Maximum Ratings
Parameter
I_D @ T_C = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
™ ^{ID @ TC = 100°C Continuous Drain Current, VGS @ 10V}
I_DM
Pulsed Drain Current
P_D @T_C = 25°C Power Dissipation
Linear Derating Factor
V_GS
Gate-to-Source Voltage
d _{EAS (Thermally limited)} Single Pulse Avalanche Energy
h _{EAS (Tested )} Single Pulse Avalanche Energy Tested Value
Ù _IAR
Avalanche Current
g _EAR
Repetitive Avalanche Energy
T_J
T_STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
i Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
R_θJC
R_θCS
R_θJA
R_θJA
Junction-to-Case
i Case-to-Sink, Flat Greased Surface
i Junction-to-Ambient
j Junction-to-Ambient (PCB Mount)
www.irf.com
Max.
36
25
140
92
0.61
± 20
83
120
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
y y 10 lbf in (1.1N m)
Typ.
–––
0.50
–––
–––
Max.
1.64
–––
62
40
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
1
07/23/10