IRF5210SPBF_15 Datasheet, PDF (1/10 Pages) International Rectifier – Advanced Process Technology

l Advanced Process Technology
l Ultra Low On-Resistance
l 150°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Some Parameters are Different from
IRF5210S/L
l P-Channel
l Lead-Free
Description
Features of this design are a 150°C junction
operating temperature, fast switching speed and
improved repetitive avalanche rating . These fea-
tures combine to make this design an extremely
efficient and reliable device for use in a wide
variety of other applications.
PD - 97049B
IRF5210SPbF
IRF5210LPbF
HEXFET^® Power MOSFET
D
V_DSS = -100V
R_DS(on) = 60mΩ
G
S
I_D = -38A
D
D
S
D
G
D²Pak
IRF5210SPbF
S
D
G
TO-262
IRF5210LPbF
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Parameter
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_A = 25°C
P_D @T_C = 25°C
Continuous Drain Current, V_GS @ -10V
Continuous Drain Current, VGS @ -10V
c Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
V_GS
E_AS
I_AR
E_AR
dv/dt
Linear Derating Factor
Gate-to-Source Voltage
d Single Pulse Avalanche Energy
c Avalanche Current
c Repetitive Avalanche Energy
e Peak Diode Recovery dv/dt
T_J
T_STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
R_θJC
Junction-to-Case
R_θJA
g Junction-to-Ambient (PCB Mount, steady state)
Max.
-38
-24
-140
3.1
170
1.3
± 20
120
-23
17
-7.4
-55 to + 150
300 (1.6mm from case )
Typ.
–––
–––
Max.
0.75
40
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
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1
08/04/09