IRF460_15 Datasheet, PDF (1/7 Pages) International Rectifier – Repetitive Avalanche Ratings

PD-90467A
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET^®TRANSISTORS
THRU-HOLE (TO-204AA/AE)
IRF460
500V, N-CHANNEL
Product Summary
Part Number BVDSS RDS(on) ID
IRF460
500V 0.27Ω 21A
The HEXFET^®technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this
latest “State of the Art” design achieves: very low on-
state resistance combined with high transconductance;
superior reverse energy and diode recovery dv/dt
capability.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as voltage
control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers,
audio amplifiers and high energy pulse circuits.
TO-3
Features:
n Repetitive Avalanche Ratings
n Dynamic dv/dt Rating
n Hermetically Sealed
n Simple Drive Requirements
n Ease of Paralleling
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25°C Continuous Drain Current
ID @ VGS = 10V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
21
14
A
84
300
W
2.4
W/°C
±20
V
1200
mJ
21
A
30
mJ
3.5
V/ns
-55 to 150
°C
300 (0.063 in. (1.6mm) from case for 10s)
11.5 (typical)
g
For footnotes, refer to the last page
www.irf.com
1
09/04/14