IRF4104GPBF Datasheet, PDF (1/9 Pages) International Rectifier – HEXFET® Power MOSFET

PD - 96350
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
l Halogen-Free
G
Description
This HEXFET^® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features combine
to make this design an extremely efficient and
reliable device for use in a wide variety of
applications.
Absolute Maximum Ratings
Parameter
I_D @ T_C = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
I_D @ T_C = 100°C Continuous Drain Current, VGS @ 10V
™ ^{ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package limited)}
I_DM
Pulsed Drain Current
P_D @T_C = 25°C Power Dissipation
Linear Derating Factor
V_GS
Gate-to-Source Voltage
d _{EAS (Thermally limited)} Single Pulse Avalanche Energy
h _{EAS (Tested )} Single Pulse Avalanche Energy Tested Value
Ù _IAR
Avalanche Current
g _EAR
Repetitive Avalanche Energy
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
i Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
R_θJC
R_θCS
R_θJA
Junction-to-Case
i Case-to-Sink, Flat Greased Surface
i Junction-to-Ambient
www.irf.com
IRF4104GPbF
HEXFET^® Power MOSFET
D
V_DSS = 40V
R_DS(on) = 5.5mΩ
I_D = 75A
S
TO-220AB
IRF4104GPbF
Max.
120
84
75
470
140
0.95
± 20
120
220
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
y y 10 lbf in (1.1N m)
Typ.
–––
0.50
–––
Max.
1.05
–––
62
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
1
01/18/11