IRF4104 Datasheet, PDF (1/12 Pages) International Rectifier – AUTOMOTIVE MOSFET

PD - 94639A
AUTOMOTIVE MOSFET
IRF4104
IRF4104S
IRF4104L
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
Description
Specifically designed for Automotive applications,
this HEXFET^® Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety
of other applications.
Absolute Maximum Ratings
HEXFET^® Power MOSFET
D
V_DSS = 40V
R_DS(on) = 5.5mΩ
G
I_D = 75A
S
TO-220AB
IRF4104
D²Pak
IRF4104S
TO-262
IRF4104L
Parameter
I_D @ T_C = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
I_D @ T_C = 100°C Continuous Drain Current, VGS @ 10V
™ ^{ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package limited)}
I_DM
Pulsed Drain Current
P_D @T_C = 25°C Power Dissipation
Max.
120
84
75
470
140
Units
A
W
Linear Derating Factor
V_GS
Gate-to-Source Voltage
d _{EAS (Thermally limited)} Single Pulse Avalanche Energy
h _{EAS (Tested )} Single Pulse Avalanche Energy Tested Value
Ù _IAR
Avalanche Current
g _EAR
Repetitive Avalanche Energy
T_J
Operating Junction and
T_STG
Storage Temperature Range
0.95
± 20
120
220
See Fig.12a, 12b, 15, 16
-55 to + 175
W/°C
V
mJ
A
mJ
°C
Soldering Temperature, for 10 seconds
i Mounting Torque, 6-32 or M3 screw
Thermal Resistance
300 (1.6mm from case )
y y 10 lbf in (1.1N m)
R_θJC
R_θCS
R_θJA
R_θJA
Parameter
Junction-to-Case
i Case-to-Sink, Flat Greased Surface
i Junction-to-Ambient
j Junction-to-Ambient (PCB Mount)
Typ.
–––
0.50
–––
–––
Max.
1.05
–––
62
40
Units
°C/W
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1
8/29/03