IRF3808SPBF_15 Datasheet, PDF (1/12 Pages) International Rectifier – Advanced Process Technology

Typical Applications
l Industrial Motor Drive
Benefits
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
G
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
Description
This Advanced Planar Stripe HEXFET ® Power MOSFET
utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional
features of this HEXFET power MOSFET are a 175°C
junction operating temperature, low RθJC, fast switching
speed and improved repetitive avalanche rating. This
combination makes the design an extremely efficient and
reliable choice for use in a wide variety of applications.
IRF3808SPbF
IRF3808LPbF
HEXFET^® Power MOSFET
D
V_DSS = 75V
R_DS(on) = 0.007Ω
I_D = 106A
S
D²Pak
TO-262
IRF3808SPbF IRF3808LPbF
Base Part Number
IRF3808LPbF
IRF3808SPbF
Package Type
TO-262
D²Pak
Standard Pack
Form
Tube
Tube
Tape and Reel Left
Tape and Reel Right
Quantity
50
50
800
800
Orderable Part Number
IRF3808LPbF
IRF3808SPbF
IRF3808STRLPbF
IRF3808STRRPbF
Absolute Maximum Ratings
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
V_GS
E_AS
I_AR
E_AR
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy†
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
106
75
550
200
1.3
± 20
430
82
See Fig.12a, 12b, 15, 16
5.5
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
R_θJC
R_θJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB Mounted, Steady State)‡
Typ.
–––
–––
Max.
0.75
40
Units
°C/W
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November 01, 2013