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IRF3808SPBF Datasheet, PDF (1/11 Pages) International Rectifier – AUTOMOTIVE MOSFET | |||
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PD - 95467
IRF3808SPbF
AUTOMOTIVE MOSFET IRF3808LPbF
Typical Applications
â Integrated Starter Alternator
HEXFET® Power MOSFET
â 42 Volts Automotive Electrical Systems
â Lead-Free
Benefits
D
VDSS = 75V
â Advanced Process Technology
â Ultra Low On-Resistance
â Dynamic dv/dt Rating
â 175°C Operating Temperature
â Fast Switching
RDS(on) = 0.007â¦
G
ID = 106AÂ
S
â Repetitive Avalanche Allowed up to Tjmax
Description
Designed specifically for Automotive applications, this Advanced
Planar Stripe HEXFET ® Power MOSFET utilizes the latest pro-
cessing techniques to achieve extremely low on-resistance per
silicon area. Additional features of this HEXFET power MOSFET
are a 175°C junction operating temperature, low RθJC, fast switch-
ing speed and improved repetitive avalanche rating. This combina-
tion makes the design an extremely efficient and reliable choice for
D2Pak
TO-262
use in higher power Automotive electronic systems and a wide IRF3808S
IRF3808L
variety of other applications.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current Â
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche EnergyÂ
Avalanche CurrentÂ
Repetitive Avalanche EnergyÂ
Peak Diode Recovery dv/dt Â
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
106Â
75Â
550
200
1.3
± 20
430
82
See Fig.12a, 12b, 15, 16
5.5
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB Mounted, Steady State)**
Typ.
âââ
âââ
Max.
0.75
40
Units
°C/W
HEXFET(R) is a registered trademark of International Rectifier.
www.irf.com
1
6/30/04
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