IRF3808S Datasheet, PDF (1/11 Pages) International Rectifier – AUTOMOTIVE MOSFET

PD - 94338A
IRF3808S
AUTOMOTIVE MOSFET
Typical Applications
q Integrated Starter Alternator
q 42 Volts Automotive Electrical Systems
Benefits
q Advanced Process Technology
q Ultra Low On-Resistance
q Dynamic dv/dt Rating
G
q 175°C Operating Temperature
q Fast Switching
q Repetitive Avalanche Allowed up to Tjmax
IRF3808L
HEXFET^® Power MOSFET
D
V_DSS = 75V
R_DS(on) = 0.007Ω
I_D = 106AV
S
Description
Designed specifically for Automotive applications, this Advanced
Planar Stripe HEXFET ® Power MOSFET utilizes the latest pro-
cessing techniques to achieve extremely low on-resistance per
silicon area. Additional features of this HEXFET power MOSFET
are a 175°C junction operating temperature, low RθJC, fast switch-
ing speed and improved repetitive avalanche rating. This combina-
tion makes the design an extremely efficient and reliable choice for
use in higher power Automotive electronic systems and a wide
variety of other applications.
D²Pak
IRF3808S
TO-262
IRF3808L
Absolute Maximum Ratings
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
V_GS
E_AS
I_AR
E_AR
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current Q
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche EnergyR
Avalanche CurrentQ
Repetitive Avalanche EnergyW
Peak Diode Recovery dv/dt S
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
106V
75V
550
200
1.3
± 20
430
82
See Fig.12a, 12b, 15, 16
5.5
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
R_θJC
R_θJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB Mounted, Steady State)**
Typ.
–––
–––
Max.
0.75
40
Units
°C/W
HEXFET(R) is a registered trademark of International Rectifier.
www.irf.com
1
03/08/02