IRF3808 Datasheet, PDF (1/9 Pages) International Rectifier – Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A⑥)

PD - 94291B
AUTOMOTIVE MOSFET
IRF3808
Typical Applications
HEXFET^® Power MOSFET
q Integrated Starter Alternator
q 42 Volts Automotive Electrical Systems
Benefits
D
V_DSS = 75V
q Advanced Process Technology
q Ultra Low On-Resistance
q Dynamic dv/dt Rating
G
R_DS(on) = 0.007Ω
q 175°C Operating Temperature
q Fast Switching
I_D = 140AV
S
q Repetitive Avalanche Allowed up to Tjmax
Description
Designed specifically for Automotive applications, this Advanced
Planar Stripe HEXFET ® Power MOSFET utilizes the latest process-
ing techniques to achieve extremely low on-resistance per silicon
area. Additional features of this HEXFET power MOSFET are a 175°C
junction operating temperature, low RθJC, fast switching speed and
improved repetitive avalanche rating. This combination makes the
design an extremely efficient and reliable choice for use in higher
power Automotive electronic systems and a wide variety of other
applications.
TO-220AB
Absolute Maximum Ratings
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
V_GS
E_AS
I_AR
E_AR
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current Q
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche EnergyR
Avalanche CurrentQ
Repetitive Avalanche EnergyW
Peak Diode Recovery dv/dt S
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
140V
97V
550
330
2.2
± 20
430
82
See Fig.12a, 12b, 15, 16
5.5
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Mounting Torque, 6-32 or M3 screw
10 lbf•in (1.1N•m)
Thermal Resistance
R_θJC
R_θCS
R_θJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.50
–––
Max.
0.45
–––
62
Units
°C/W
HEXFET(R) is a registered trademark of International Rectifier.
www.irf.com
1
02/06/02