IRF3805PBF_15 Datasheet, PDF (1/12 Pages) International Rectifier – Advanced Process Technology

PD - 97046A
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
Description
This HEXFET^® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating.These features combine
to make this design an extremely efficient and
reliable device for use in a wide variety of
applications.
Absolute Maximum Ratings
G
TO-220AB
IRF3805PbF
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_DM
P_D @T_C = 25°C
V_GS
E_{AS (Thermally limited)}
E_AS (Tested )
I_AR
E_AR
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
™ ^{Continuous Drain Current, VGS @ 10V (Package limited)}
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
d Single Pulse Avalanche Energy
h Single Pulse Avalanche Energy Tested Value
Ù Avalanche Current
g Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
i Mounting Torque, 6-32 or M3 screw
Thermal Resistance
R_θJC
R_θCS
R_θJA
R_θJA
www.irf.com
Parameter
k Junction-to-Case
i Case-to-Sink, Flat Greased Surface
ik Junction-to-Ambient
jk Junction-to-Ambient (PCB Mount)
IRF3805PbF
IRF3805SPbF
IRF3805LPbF
HEXFET^® Power MOSFET
D
V_DSS = 55V
R_DS(on) = 3.3mΩ
I_D = 75A
S
D²Pak
TO-262
IRF3805SPbF IRF3805LPbF
Max.
210
150
75
890
300
2.0
± 20
650
940
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
y y 10 lbf in (1.1N m)
Units
A
W
W/°C
V
mJ
A
mJ
°C
Typ.
–––
0.50
–––
–––
Max.
l 0.5
–––
62
40
Units
°C/W
1
07/23/10