IRF3717 Datasheet, PDF (1/10 Pages) International Rectifier – HEXFETPower MOSFET

PD - 95843
IRF3717
Applications
l Synchronous MOSFET for Notebook
Processor Power
l Synchronous Rectifier MOSFET for
Isolated DC-DC Converters in
Networking Systems
V_DSS
20V
HEXFET^® Power MOSFET
R_DS(on) max
I_D
: 4.4m @V_GS = 10V 20A
S
1
S
2
AA
8
D
7
D
Benefits
l Ultra-Low Gate Impedance
l Very Low R_DS(on)
l Fully Characterized Avalanche Voltage
and Current
S
3
G
4
6
D
5
D
Top View
SO-8
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
c Pulsed Drain Current
Power Dissipation
Power Dissipation
T_J
T_STG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
R_θJL
R_θJA
Junction-to-Drain Lead
f Junction-to-Ambient
Max.
20
± 20
20
16
160
2.5
1.6
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes  through „ are on page 10
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1
2/20/04