IRF3711Z Datasheet, PDF (1/12 Pages) International Rectifier – HEXFET Power MOSFET

Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
PD - 94757A
IRF3711Z
IRF3711ZS
IRF3711ZL
HEXFET^® Power MOSFET
V_DSS R_DS(on) max Qg
20V
6.0m: 16nC
Benefits
l Low R_DS(on) at 4.5V V_GS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
P_D @T_C = 100°C
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
™ Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
T_J
T_STG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
f Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
R_θJC
i Junction-to-Case
R_θCS
f Case-to-Sink, Flat Greased Surface
R_θJA
fià Junction-to-Ambient
R_θJA
gi Junction-to-Ambient (PCB Mount)
Notes  through ‡ are on page 12
www.irf.com
TO-220AB
IRF3711Z
D²Pak
IRF3711ZS
Max.
20
± 20
92 h
65 h
380
79
40
0.53
-55 to + 175
300 (1.6mm from case)
y y 10 lbf in (1.1N m)
Typ.
–––
0.50
–––
–––
Max.
1.89
–––
62
40
TO-262
IRF3711ZL
Units
V
A
W
W/°C
°C
Units
°C/W
1
10/30/03