IRF3711 Datasheet, PDF (1/11 Pages) International Rectifier – Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A⑥)

PD- 94062B
SMPS MOSFET
IRF3711
IRF3711S
IRF3711L
Applications
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
High Frequency Buck Converters for
Server Processor Power Synchronous FET
Optimized for Synchronous Buck
Converters Including Capacitive Induced
Turn-on Immunity
HEXFET^® Power MOSFET
V_DSS
20V
R_DS(on) max
I_D
6.0mΩ
110A
Benefits
Ultra-Low Gate Impedance
Very Low RDS(on) at 4.5V V_GS
Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRF3711
Absolute Maximum Ratings
Symbol
V_DS
V_GS
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
P_D @T_A = 25°C
T_J , T_STG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Junction and Storage Temperature Range
D²Pak
IRF3711S
Max.
20
± 20
110
69
440
120
3.1
0.96
-55 to + 150
TO-262
IRF3711L
Units
V
V
A
W
W
W/°C
°C
Thermal Resistance
R_θJC
R_θCS
R_θJA
R_θJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB mount)
Typ.
–––
0.50
–––
–––
Max.
1.04
–––
62
40
Units
°C/W
Notes through are on page 11
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1
11/15/01