IRF3710ZPBF Datasheet, PDF (1/12 Pages) International Rectifier – AUTOMOTIVE MOSFET

PD - 95466
AUTOMOTIVE MOSFET _IRF3710ZPbF
IRF3710ZSPbF
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free
Description
Specifically designed for Automotive applications,
this HEXFET^® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional fea-
tures of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient
and reliable device for use in Automotive applica-
tions and a wide variety of other applications.
IRF3710ZLPbF
HEXFET^® Power MOSFET
D
V_DSS = 100V
R_DS(on) = 18mΩ
G
I_D = 59A
S
TO-220AB
IRF3710Z
D²Pak
IRF3710ZS
TO-262
IRF3710ZL
Absolute Maximum Ratings
Parameter
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (See Fig. 9)
c Pulsed Drain Current
Maximum Power Dissipation
V_GS
E_AS
E_AS (tested)
I_AR
E_AR
Linear Derating Factor
Gate-to-Source Voltage
d Single Pulse Avalanche Energy (Thermally Limited)
i Single Pulse Avalanche Energy Tested Value
c Avalanche Current
h Repetitive Avalanche Energy
T_J
T_STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
R_θJC
R_θCS
R_θJA
R_θJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
j Junction-to-Ambient (PCB Mount, steady state)
HEXFET^® is a registered trademark of International Rectifier.
www.irf.com
Max.
59
42
240
160
1.1
± 20
170
200
See Fig.12a,12b,15,16
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.50
–––
–––
Max.
0.92
–––
62
40
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
1
6/30/04