IRF3707ZCS Datasheet, PDF (1/11 Pages) International Rectifier – HEXFET Power MOSFET

Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
Benefits
l Low R_DS(on) at 4.5V V_GS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
PD - 94784B
IRF3707ZCS
IRF3707ZCL
HEXFET^® Power MOSFET
V_DSS R_DS(on) max Qg
30V
9.5m: 9.7nC
D²Pak
IRF3707ZCS
TO-262
IRF3707ZCL
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
P_D @T_C = 100°C
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
c ^{Continuous Drain Current, VGS @ 10V}
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
T_J
T_STG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
R_θJC
Junction-to-Case
R_θJA
g Junction-to-Ambient (PCB Mount)
Notes  through † are on page 11
www.irf.com
Max.
30
± 20
59h
42h
230
57
28
0.38
-55 to + 175
300 (1.6mm from case)
x x 10 lbf in (1.1 N m)
Typ.
–––
–––
Max.
2.653
40
Units
V
A
W
W/°C
°C
Units
°C/W
1
12/04/03