IRF3707 Datasheet, PDF (1/10 Pages) International Rectifier – Power MOSFET(Vdss=30V, Rds(on)max=12.5mohm, Id=62A)

PD - 93937B
SMPS MOSFET
Applications
l High Frequency DC-DC Isolated
Converters with Synchronous Rectification
for Telecom and Industrial use
l High Frequency Buck Converters for
Computer Processor Power
V_DSS
30V
IRF3707
IRF3707S
IRF3707L
HEXFET^® Power MOSFET
R_DS(on) max
I_D
12.5mΩ
62A
Benefits
l Ultra-Low Gate Impedance
l Very Low R_DS(on)
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRF3707
D²Pak
IRF3707S
TO-262
IRF3707L
Absolute Maximum Ratings
Symbol
V_DS
V_GS
I_D @ T_C = 25°C
I_D @ T_C = 70°C
I_DM
P_D @T_C = 25°C
P_D @T_C = 70°C
T_J , T_STG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current
Maximum Power Dissipationƒ
Maximum Power Dissipationƒ
Linear Derating Factor
Junction and Storage Temperature Range
Max.
30
± 20
62
52
248
87
61
0.59
-55 to + 175
Units
V
V
A
W
W
mW/°C
°C
Thermal Resistance
R_θJC
R_θCS
R_θJA
R_θJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface „
Junction-to-Ambient„
Junction-to-Ambient (PCB mount)*
Typ.
–––
0.50
–––
–––
* When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
Max.
1.73
–––
62
40
Units
°C/W
Notes  through „ are on page 10
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8/22/00