IRF3610SPBF_15 Datasheet, PDF (1/9 Pages) International Rectifier –
High Efficiency Synchronous Rectification in SMPS

IRF3610SPbF
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
HEXFET^® Power MOSFET
D _VDSS
R_DS(on) typ.
max.
S I_D
100V
9.3mΩ
11.6mΩ
103A
D
S
G
D²Pak
IRF3610SPbF
G
Gate
D
D ra in
S
Source
Absolute Maximum Ratings
Symbol
Parameter
I_D @ T_C = 25°C Continuous Drain Current, V_GS @ 10V
I_D @ T_C = 100°C
I_DM
Continuous Drain Current, V_GS @ 10V
d Pulsed Drain Current
P_D @T_C = 25°C _{Maximum Power Dissipation}
Linear Derating Factor
V_GS
dv/dt
Gate-to-Source Voltage
f Peak Diode Recovery
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Avalanche Characteristics
d E_AS
Single Pulse Avalanche Energy (Thermally Limited)
Ù I_AR
Avalanche Current
™ E_AR
Repetitive Avalanche Energy
Thermal Resistance
Symbol
R_θJC
R_θJA
Parameter
jk Junction-to-Case
i Junction-to-Ambient (PCB Mount)
Max.
103
73
410
333
2.2
± 20
23
-55 to + 175
300 (1.6mm from case)
460
See Fig. 14, 15, 22a, 22b
Typ.
–––
–––
Max.
0.50
40
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1
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March 26, 2014