IRF3305PBF_15 Datasheet, PDF (1/9 Pages) International Rectifier – FULLY AVALANCHE RATED

PD - 95758A
Features
l Designed to support Linear Gate Drive
Applications
l 175°C Operating Temperature
l Low Thermal Resistance Junction - Case
l Rugged Process Technology and Design
l Fully Avalanche Rated
G
l Lead-Free
Description
This HEXFET Power MOSFET utilizes a rugged
planar process technology and device design,
which greatly improves the Safe Operating Area
(SOA) of the device. These features, coupled
with 175°C junction operating temperature and
"low thermal resistance of 0.45C/W"
Absolute Maximum Ratings
Parameter
I_D @ T_C = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
I_D @ T_C = 100°C Continuous Drain Current, VGS @ 10V
™ ^{ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)}
I_DM
Pulsed Drain Current
P_D @T_C = 25°C Power Dissipation
Linear Derating Factor
V_GS
Gate-to-Source Voltage
d E_{AS (Thermally limited)} Single Pulse Avalanche Energy
h E_AS (Tested ) Single Pulse Avalanche Energy Tested Value
Ù I_AR
Avalanche Current
g E_AR
Repetitive Avalanche Energy
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
R_θJC
i Junction-to-Case
R_θCS
R_θJA
Case-to-Sink, Flat, Greased Surface
i Junction-to-Ambient
www.irf.com
IRF3305PbF
HEXFET^® Power MOSFET
D
V_DSS = 55V
R_DS(on) = 8.0mΩ
I_D = 75A
S
TO-220AB
Max.
140
99
75
560
330
2.2
± 20
470
860
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
y y 10 lbf in (1.1N m)
Units
A
W
W/°C
V
mJ
A
mJ
°C
Typ.
–––
0.50
–––
Max.
0.45
–––
62
Units
°C/W
1
07/23/10