IRF3205Z Datasheet, PDF (1/12 Pages) International Rectifier – AUTOMOTIVE MOSFET

PD - 94653B
AUTOMOTIVE MOSFET
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
G
Description
Specifically designed for Automotive applications,
this HEXFET^® Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety
of other applications.
TO-220AB
IRF3205Z
Absolute Maximum Ratings
Parameter
I_D @ T_C = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
I_D @ T_C = 100°C Continuous Drain Current, VGS @ 10V
™ ^{ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)}
I_DM
Pulsed Drain Current
P_D @T_C = 25°C Power Dissipation
Linear Derating Factor
V_GS
Gate-to-Source Voltage
d E_{AS (Thermally limited)} Single Pulse Avalanche Energy
h E_AS (Tested ) Single Pulse Avalanche Energy Tested Value
Ù I_AR
Avalanche Current
g E_AR
Repetitive Avalanche Energy
T_J
T_STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
i Mounting Torque, 6-32 or M3 screw
Thermal Resistance
R_θJC
R_θCS
R_θJA
R_θJA
Parameter
Junction-to-Case
i Case-to-Sink, Flat Greased Surface
i Junction-to-Ambient
j Junction-to-Ambient (PCB Mount)
www.irf.com
IRF3205Z
IRF3205ZS
IRF3205ZL
HEXFET^® Power MOSFET
D
V_DSS = 55V
R_DS(on) = 6.5mΩ
S
I_D = 75A
D²Pak
IRF3205ZS
TO-262
IRF3205ZL
Max.
110
78
75
440
170
1.1
± 20
180
250
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
y y 10 lbf in (1.1N m)
Units
A
W
W/°C
V
mJ
A
mJ
°C
Typ.
–––
0.50
–––
–––
Max.
0.90
–––
62
40
Units
°C/W
1
10/7/03