IRF3007SPBF_15 Datasheet, PDF (1/11 Pages) International Rectifier – Ultra Low On-Resistance

Typical Applications
l Industrial Motor Drive
Features
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
G
l Lead-Free
Description
This design of HEXFET^® Power MOSFETs utilizes
the lastest processing techniques to achieve extremely
low on-resistance per silicon area. Additional features
of this HEXFET power MOSFET are a 175°C junction
operating temperature, fast switching speed and
improved repetitive avalanche rating. These combine
to make this design an extremely efficient and reliable
device for use in a wide variety of applications.
Absolute Maximum Ratings
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
V_GS
E_AS
E_AS (6 sigma)
I_AR
E_AR
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Single Pulse Avalanche Energy Tested Value‡
Avalanche Current
Repetitive Avalanche Energy†
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
PD - 95494A
IRF3007SPbF
IRF3007LPbF
HEXFET^® Power MOSFET
D
V_DSS = 75V
R_DS(on) = 0.0126Ω
I_D = 62A
S
D²Pak
TO-262
IRF3007SPbF IRF3007LPbF
Max.
62
44
320
120
0.8
± 20
290
946
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
°C
Thermal Resistance
R_θJC
R_θJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB Mounted,steady state)**
Typ.
–––
–––
** This is applied to D²Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
www.irf.com
Max.
1.25
62
Units
°C/W
1
07/23/10