IRF3007PBF Datasheet, PDF (1/10 Pages) International Rectifier – HEXFET® Power MOSFET

PD - 95618
AUTOMOTIVE MOSFET _IRF3007PbF
Typical Applications
l 42 Volts Automotive Electrical Systems
l Lead-Free
Features
l Ultra Low On-Resistance
l 175°C Operating Temperature
G
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Automotive [Q101] Qualified
Description
Specifically designed for Automotive applications, this
design of HEXFET^® Power MOSFETs utilizes the
lastest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of
this HEXFET power MOSFET are a 175°C junction
operating temperature, fast switching speed and
improved repetitive avalanche rating. These combine
to make this design an extremely efficient and reliable
device for use in Automotive applications and a wide
variety of other applications.
HEXFET^® Power MOSFET
D
V_DSS = 75V
R_DS(on) = 0.0126Ω
I_D = 75A
S
TO-220AB
Absolute Maximum Ratings
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_DM
P_D @T_C = 25°C
V_GS
E_AS
E_AS (6 sigma)
I_AR
E_AR
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V (Silicon limited)
Continuous Drain Current, V_GS @ 10V (See Fig.9)
Continuous Drain Current, V_GS @ 10V (Package limited)
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Single Pulse Avalanche Energy Tested Value‡
Avalanche Current
Repetitive Avalanche Energy†
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Max.
80
56
75
320
200
1.3
± 20
280
946
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
1.1 (10)
Thermal Resistance
R_θJC
R_θCS
R_θJA
www.irf.com
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.50
–––
Max.
0.74
–––
62
Units
A
W
W/°C
V
mJ
A
mJ
°C
N•m (lbf•in)
Units
°C/W
1
8/2/04