IRF2903ZPBF_15 Datasheet, PDF (1/9 Pages) International Rectifier – Advanced Process Technology

PD -96097A
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
G
l Lead-Free
Description
This HEXFET^® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features combine
to make this design an extremely efficient and
reliable device for use in a wide variety of
applications.
G
Gate
Absolute Maximum Ratings
Parameter
I_D @ T_C = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
I_D @ T_C = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
™ ^{ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)}
I_DM
Pulsed Drain Current
P_D @T_C = 25°C Power Dissipation
Linear Derating Factor
V_GS
Gate-to-Source Voltage
d EAS (Thermally limited) Single Pulse Avalanche Energy
h E_AS (Tested ) Single Pulse Avalanche Energy Tested Value
Ù IAR
Avalanche Current
g E_AR
Repetitive Avalanche Energy
T_J
T_STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
i Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
R_θJC
R_θCS
R_θJA
j Junction-to-Case
i Case-to-Sink, Flat, Greased Surface
ij Junction-to-Ambient
www.irf.com
IRF2903ZPbF
HEXFET^® Power MOSFET
D
V_DSS = 30V
R_DS(on) = 2.4mΩ
S
I_D = 75A
D
S
D
G
TO-220AB
IRF2903ZPbF
D
Drain
S
Source
Max.
260
180
75
1020
290
2.0
± 20
290
820
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
y y 10 lbf in (1.1N m)
Typ.
–––
0.50
–––
Max.
0.51
–––
62
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
1
07/22/10