IRF2805SPBF_15 Datasheet, PDF (1/11 Pages) International Rectifier – Advanced Process Technology

PD - 95944A
IRF2805SPbF
IRF2805LPbF
Typical Applications
l Industrial Motor Drive
HEXFET^® Power MOSFET
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
G
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
Description
This HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of this
product are a 175°C junction operating temperature,
fast switching speed and improved repetitive avalanche
rating . These features combine to make this design
an extremely efficient and reliable device for use in a
wide variety of applications.
D
V_DSS = 55V
R_DS(on) = 4.7mΩ
S
I_D = 135A†
D²Pak
TO-262
IRF2805SPbF IRF2805LPbF
Absolute Maximum Ratings
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
V_GS
E_AS
E_AS (6 sigma)
I_AR
E_AR
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Single Pulse Avalanche Energy Tested Valueˆ
Avalanche Current
Repetitive Avalanche Energy‡
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
135†
96†
700
200
1.3
± 20
380
1220
See Fig.12a, 12b, 15, 16
2.0
-55 to + 175
300 (1.6mm from case )
Thermal Resistance
R_θJC
R_θJA
Parameter
Junction-to-Case
Junction-to-Ambient(PCB Mounted, steady state)**
Typ.
–––
–––
Max.
0.75
40
HEXFET(R) is a registered trademark of International Rectifier.
www.irf.com
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
07/22/10