IRF2805S Datasheet, PDF (1/11 Pages) International Rectifier – AUTOMOTIVE MOSFET

AUTOMOTIVE MOSFET
PD - 94428
IRF2805S
IRF2805L
Typical Applications
● Climate Control
● ABS
● Electronic Braking
● Windshield Wipers
Features
● Advanced Process Technology
● Ultra Low On-Resistance
G
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
HEXFET^® Power MOSFET
D
V_DSS = 55V
R_DS(on) = 4.7mΩ
S
I_D = 135AV
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this product are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating . These features com-
bine to make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety
of other applications.
Absolute Maximum Ratings
D²Pak
IRF2805S
TO-262
IRF2805L
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
V_GS
E_AS
E_AS (6 sigma)
I_AR
E_AR
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current Q
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche EnergyR
Single Pulse Avalanche Energy Tested ValueX
Avalanche CurrentQ
Repetitive Avalanche EnergyW
Peak Diode Recovery dv/dt S
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
135V
96V
700
200
1.3
± 20
380
1220
See Fig.12a, 12b, 15, 16
2.0
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
R_θJC
R_θJA
Parameter
Junction-to-Case
Junction-to-Ambient(PCB Mounted, steady state)**
Typ.
–––
–––
Max.
0.75
40
Units
°C/W
HEXFET(R) is a registered trademark of International Rectifier.
www.irf.com
1
06/10/02