IRF2805PBF Datasheet, PDF (1/9 Pages) International Rectifier – AUTOMOTIVE MOSFET

PD - 95493
IRF2805PbF
AUTOMOTIVE MOSFET
Typical Applications
l Climate Control, ABS, Electronic Braking,
Windshield Wipers
l Lead-Free
HEXFET^® Power MOSFET
D
V_DSS = 55V
Features
l Advanced Process Technology
G
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
R_DS(on) = 4.7mΩ
S
I_D = 75A
Description
Specifically designed for Automotive applications, this HEXFET^® Power
MOSFET utilizes the latest processing techniques to achieve extremely
low on-resistance per silicon area. Additional features of this design are
a 175°C junction operating temperature, fast switching speed and im-
proved repetitive avalanche rating . These features combine to make this
design an extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
TO-220AB
Absolute Maximum Ratings
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_DM
P_D @T_C = 25°C
V_GS
E_AS
E_AS (6 sigma)
I_AR
E_AR
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V (Silicon limited)
Continuous Drain Current, V_GS @ 10V (See Fig.9)
Continuous Drain Current, V_GS @ 10V (Package limited)
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Single Pulse Avalanche Energy Tested Value‡
Avalanche Current
Repetitive Avalanche Energy†
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Max.
175
120
75
700
330
2.2
± 20
450
1220
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
1.1 (10)
Thermal Resistance
Parameter
Typ.
R_θJC
Junction-to-Case
–––
R_θCS
Case-to-Sink, Flat, Greased Surface
0.50
R_θJA
Junction-to-Ambient
–––
HEXFET(R) is a registered trademark of International Rectifier.
www.irf.com
Max.
0.45
–––
62
Units
A
W
W/°C
V
mJ
A
mJ
°C
N•m (lbf•in)
Units
°C/W
1
07/01/04