English
Language : 

IRF2804STRR7PP Datasheet, PDF (1/11 Pages) International Rectifier – Advanced Process Technology
PD - 96891A
AUTOMOTIVE MOSFET
IRF2804S-7P
Features
HEXFET® Power MOSFET
l Advanced Process Technology
D
l Ultra Low On-Resistance
l 175°C Operating Temperature
VDSS = 40V
l Fast Switching
G
l Repetitive Avalanche Allowed up to Tjmax
RDS(on) = 1.6mΩ
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional fea-
tures of this design are a 175°C junction operat-
ing temperature, fast switching speed and im-
proved repetitive avalanche rating . These fea-
tures combine to make this design an extremely
efficient and reliable device for use in Automotive
applications and a wide variety of other applica-
tions.
Absolute Maximum Ratings
S
S (Pin 2, 3 ,5,6,7)
G (Pin 1)
ID = 160A
D
D
SSS
SS
G
Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
320
A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (See Fig. 9)
230
ID @ TC = 25°C
IDM
Continuous Drain Current, VGS @ 10V (Package Limited)
c Pulsed Drain Current
160
1360
PD @TC = 25°C Maximum Power Dissipation
330
W
VGS
EAS
EAS (tested)
IAR
EAR
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
d Single Pulse Avalanche Energy (Thermally Limited)
h Single Pulse Avalanche Energy Tested Value
c Avalanche Current
g Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
2.2
± 20
630
1050
See Fig.12a,12b,15,16
-55 to + 175
W/°C
V
mJ
A
mJ
°C
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
j Junction-to-Case
RθCS
RθJA
RθJA
Case-to-Sink, Flat, Greased Surface
j Junction-to-Ambient
ij Junction-to-Ambient (PCB Mount, steady state)
Typ.
–––
0.50
–––
–––
Max.
0.50
–––
62
40
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
www.irf.com
1
6/01/05
 ▷