IRF2204SPBF_15 Datasheet, PDF (1/11 Pages) International Rectifier – Advanced Process Technology

Typical Applications
l Industrial Motor Drive
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
G
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
Description
This HEXFET^® Power MOSFET utilizes the lastest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of this
design are a 175°C junction operating temperature,
fast switching speed and improved repetitive
avalanche rating. These features combine to make
this design an extremely efficient and reliable device
for use in a wide variety of applications.
Absolute Maximum Ratings
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
V_GS
E_AS
I_AR
E_AR
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy‡
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
R_θJC
R_θJA
Parameter
Junction-to-Case
Junction-to-Ambient
www.irf.com
PD - 95491A
IRF2204SPbF
IRF2204LPbF
HEXFET^® Power MOSFET
D
V_DSS = 40V
R_DS(on) = 3.6mΩ
I_D = 170A†
S
D²Pak
TO-262
IRF2204SPbF IRF2204LPbF
Max.
170†
120†
850
200
1.3
± 20
460
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
°C
Typ.
–––
–––
Max.
0.75
40
Units
°C/W
1
07/22/10