IRF2204S Datasheet, PDF (1/11 Pages) International Rectifier – AUTOMOTIVE MOSFET

PD - 94502
AUTOMOTIVE MOSFET
IRF2204S
Typical Applications
● Electric Power Steering
● 14 Volts Automotive Electrical Systems
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
G
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
Description
Specifically designed for Automotive applications, this HEXFET^®
Power MOSFET utilizes the lastest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features to this design are a 175°C junction operating temperature,
fast switching speed and improved repetitive avalanche rating.
These features combine to make this design an extremely
efficient and reliable device for use in Automotive applications
and a wide variety of other applications.
IRF2204L
HEXFET^® Power MOSFET
D
V_DSS = 40V
R_DS(on) = 3.6mΩ
I_D = 170AV
S
D²Pak
IRF2204S
TO-262
IRF2204L
Absolute Maximum Ratings
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
V_GS
E_AS
I_AR
E_AR
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current Q
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche EnergyR
Avalanche CurrentQ
Repetitive Avalanche EnergyW
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
R_θJC
R_θJA
Parameter
Junction-to-Case
Junction-to-Ambient
Max.
170V
120V
850
200
1.3
± 20
460
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
°C
Typ.
–––
–––
Max.
0.75
40
Units
°C/W
www.irf.com
1
07/01/02