IRF1704 Datasheet, PDF (1/8 Pages) International Rectifier – Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A⑥)

PD -94012B
AUTOMOTIVE MOSFET
IRF1704
Benefits
l 200°C Operaing Temperature
HEXFET^® Power MOSFET
l Advanced Process Technology
l Ultra Low On-Resistance
D
V_DSS = 40V
l Dynamic dv/dt Rating
l Fast Switching
l Repetitive Avalanche Allowed
G
R_DS(on) = 0.004Ω
up to Tj Max
l Automotive Qualified (Q101)
I_D = 170A†
S
Description
Specifically designed for Automotive applications, this HEXFET^® power
MOSFET has a 200°C max operating temperature with a Stripe Planar
design that utilizes the latest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of this HEXFET^® power
MOSFET are fast switching speed and improved repetitive avalanche rating.
The continuing technology leadership of Internationl Rectifier provides 200°C
operating temperature in a plastic package. At high ambient temperatures, the
IRF1704 can carry up to 20% more current than similar 175 °C Tj max devices
in the same package outline. This makes this part ideal for existing and
emerging under-the-hood automotive applications such as Electric Power
Steering (EPS), Fuel / Water Pump Control and wide variety of other
applications.
TO-220AB
Absolute Maximum Ratings
Parameter
Max.
Units
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
170†
120
680
230
1.3
A
W
W/°C
V_GS
E_AS
I_AR
E_AR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
± 20
670
100
23
1.9
V
mJ
A
mJ
V/ns
T_J
T_STG
T_LEAD
Operating Junction and
Storage Temperature Range
Lead Temperature‡
Soldering Temperature, for 10 seconds
-55 to + 200
°C
175
300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew
10 lbf•in (1.1N•m)
Thermal Resistance
R_θJC
R_θCS
R_θJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.50
–––
Max.
0.75
–––
62
Units
°C/W
www.irf.com
1
02/13/02