IRF1503PBF_15 Datasheet, PDF (1/9 Pages) International Rectifier – Advanced Process Technology

PD-95438A
IRF1503PbF
Typical Applications
l Industrial Motor Drive
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
G
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
HEXFET^® Power MOSFET
D
V_DSS = 30V
R_DS(on) = 3.3mΩ
I_D = 75A
S
Description
This design of HEXFET^® Power MOSFETs utilizes
the lastest processing techniques to achieve extremely
low on-resistance per silicon area. Additional features
of this HEXFET power MOSFET are a 175°C junction
operating temperature, fast switching speed and
improved repetitive avalanche rating. These combine
to make this design an extremely efficient and reliable
device for use in a wide variety of applications.
Absolute Maximum Ratings
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_DM
P_D @T_C = 25°C
V_GS
E_AS
E_AS (tested)
I_AR
E_AR
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V (Silicon limited)
Continuous Drain Current, V_GS @ 10V (See Fig.9)
Continuous Drain Current, V_GS @ 10V (Package limited)
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Single Pulse Avalanche Energy Tested Value†
Avalanche Current
Repetitive Avalanche Energy…
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
TO-220AB
Max.
240
170
75
960
330
2.2
± 20
510
980
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
°C
Thermal Resistance
R_θJC
R_θCS
R_θJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
www.irf.com
Typ.
–––
0.50
–––
Max.
0.45
–––
62
Units
°C/W
1
07/14/10